Abstract
X-ray absorption near-edge structure (XANES) spectroscopy is used to study the features of occupation sites of Mn dopants in the Ga1−xMnxN dilute magnetic semiconductors (DMSs) with zinc-blende structure. Theoretical XANES spectra are calculated for representative structure models of Mn atoms in the GaN lattice. It is shown that the substitutional Mn in GaN is characterized by a preedge peak at 2.0eV and a postedge multiple-scattering peak at 29.1eV. The peaks shift in position and drop in intensity dramatically for the interstitial MnI and MnGa–MnI dimer, and then disappear completely for Mn clusters. The experimental spectrum of Ga0.990Mn0.010N is almost reproduced by the calculated XANES spectrum of GaMnN with substitutional Mn.
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