Abstract

Metal-chelate complexes have been intensively investigated as an emitting layer and recognized to have excellent electroluminescence (EL) properties. Beryllium complexes such as BeBq2 and BeMq2 are known to be green-light emitting materials. In this study, the EL characteristics of co-deposited films of BeBq2 and BeMq2 was investigated using a device structure of ITO/TPD/BeBq2:BeMq2/Al. The brightness and luminescence of the co-deposited films of BeBq2 and BeMq2 were improved by a factor of 1.5∼2 in comparison with a device structure of ITO/TPD/BeBq2 or BeMq2/Al.

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