Abstract
The effect of In doping on the electroluminescence (EL) properties of Zn2SiO4:In thin films was investigated. In-doped Zn2SiO4 thin films were deposited on BaTiO3 substrates and their EL properties were characterized in this study. X-ray powder diffraction patterns of In-doped Zn2SiO4 powders revealed a single phase of Zn2SiO4 for In concentrations up to approximately 1.5 mol%, whereas a secondary phase of In2O3 was observed for In concentrations in the range of 2–10 mol%. The maximum luminance of thin film electroluminescent (TFEL) devices varied significantly with the amount of In doping. The highest luminance with blue emission was obtained when 2 mol% In was doped. The blue emission of In-doped Zn2SiO4 thin film may be related to the In substitution for Zn. The 2 mol% In-doped Zn2SiO4 thin film exhibited blue emission with CIE color coordinates of x=0.208 and y=0.086.
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