MIRIRS studies of the growth of Si and Si-Ge alloys from molecular precursors

Abstract

The adsorption of hydrogen and disilane on Si(100), Ge Si(100) and Si− Ge Si(100) surfaces, and the evolution with temperature of these adsorption systems, has been followed by multiple internal reflection IR spectroscopy (MIRIRS). The initial dissociative adsorption of disilane at 300 K is similar on both Si and Ge surfaces, but the presence of surface germanium opens up a much more facile route for monohydride decomposition and hydrogen desorption.