Adsorption of hydrogen and disilane on Si(100) and SiGe surfaces

Abstract

Temperature-programmed desorption has been used to study the adsorption of hydrogen and disilane on Si(100), and epitaxial Ge and SiGe alloy film surfaces. Dissociative adsorption of disilane on Si(100) exhibits no deuterium kinetic isotope effect and occurs with high probability at 300 K ( S 0 ∼ 0.5), but decreases with increasing substrate temperature ( E a≈−9 kJ mol −1) and is strongly suppressed at high surface hydrogen coverages. Complete removal of surface hydrogen for the Si 2H 6 Si(100) system only occurs at T> 800 K, but in the presence of surface Ge, hydrogen desorption from the surface is much more facile.