Abstract
Abstract The depth profiles of the boron–hydrogen pairs and their variations due to thermal treatments in the dark and under photoexcitation are studied in the p-type silicon crystal. The presence of minority carriers is observed to increase the dissociation rate of the BH pairs by two orders of magnitude at 310 K. The effect is attributed to recharging of the partially dissociated hydrogen atoms.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
