Abstract
30keV phosphorus ions have been implanted in p-type silicon crystals at different temperatures. The difference in the annealing behaviour between an amorphous and a nonamorphous implant has been used for the definition of a critical dose for amorphization by studying the sheet resistivity as a function of the annealing temperature. The variation of this critical dose with the implantation temperature has been studied for a constant dose rate and the results have been compared with a model for the amorphization process proposed by Morehead and Crowder. The comparison showed that the temperature dependent volume change of the amorphous zones was proportional to exp(-U/kT) and that no particular shape of the zones was favoured.
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