Abstract
Deep level transient spectroscopy measurements have been made on both n- and p-type silicon crystals containing various types of the oxygen precipitates to investigate the associated gap states. A new signal in the gap-state density was observed at about Ec−0.25 eV, as well as the previously reported peak at about Ev+0.3 eV. Both peaks are attributed to a defect generated by oxygen precipitation. The observed distribution of the gap-state density is very similar to that of the well-known Pb center due to a dangling bond of a silicon atom at the interface between the silicon and silicon dioxide at the surface of the sample. The measured gap states could be passivated by hydrogen, as found for the Pb center.
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