Abstract
Un-cooled narrow-gap mercury-cadmium-telluride (MCT) semiconductor thin layers grown on GaAs substrates that are hybridized with antennas on low permittivity dielectric substrates were considered as 128–144 GHz direct detection 6-element bolometers. Noise equivalent power (NEP) of such detectors in observed frequency range ν ≈ 128–144 GHz reaches NEP300K ≈ 2.6 × 10−10 W/Hz1/2 (with calculated gain G ≈ 9 dBi). To compare the results obtained, the measurements of GaAs conventional Schottky barrier diode detectors were fulfilled in the same conditions and similar to MCT bolometers NEP was observed.
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