Abstract
This paper describes V-band monolithic integrated circuits utilizing high f max N-AlGaAs/InGaAs/ N-AlGaAs double doped double heterojunction FETs. A high gain and high efficiency amplifier and an oscillator with low phase noise have been demonstrated. The 0.15 μm T-shaped gate HJFET with optimized recess distance from the gate to the drain edge of 0.4 μm has a high f max of 220 GHz and a high maximum drain current of 700 mA/mm with −10 V gate breakdown voltage. A single-stage 60 GHz-band amplifier has achieved 8.4 dB small signal gain with good input and output impedance matching. High power-added-efficiency of 25.6% with the output power of 15.7 dBm at 61.2 GHz has been obtained at 3 V drain bias. The maximum output power obtained is 16.4 dBm (43.7 mW). A monolithic oscillator with a series feedback topology has exhibited 4.5 dBm output power with the oscillation frequency of 50.5 GHz. The phase noise is −97 dBc/Hz at 1 MHz off-carrier, which is relatively low for the free running oscillator. The V-band MMICs are very promising for applications to compact communication systems.
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