Abstract
High gain V-band medium power MMIC amplifiers have been successfully demonstrated using 0.15 /spl mu/m T-shaped gate AlGaAs/InGaAs heterojunction FETs. Optimization of the FET achieved high f/sub max/ of 227 GHz with high gate breakdown voltage of -13 V. A single-stage 65 GHz-band amplifier has exhibited 8.7 dB small signal gain with the 1 dB-gain-down bandwidth of 2 GHz. A single-stage 60 GHz-band amplifier has achieved 8.4 dB gain with 3 GHz bandwidth and good input and output impedance matching. The output power of 37.2 mW with high power-added-efficiency of 25.6% at 61.2 GHz has been obtained at 3 V drain bias. >
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