Abstract
In this paper, we report design, fabrication and characterization of mid-wavelength interband cascade infrared photodetectors (ICIP) with two- and three-stage. The effects of stage number and absorber thickness on the optical and electrical properties of the device are studied. Dark current analysis shows that the shunt current of the three-stage ICIP is lower than that of the two-stage ICIP. The temperature-dependent quantum efficiencies of the two devices are analyzed and the diffusion lengths are simulated. The optimal absorber thicknesses of the ICIP structure are calculated for the further improvement of the device performance.
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