Midwavelength interband cascade infrared photodetectors with superlattice absorbers and gain

Abstract

We report on a comparison study of the electrical and optical properties of a set of device structures with different numbers of cascade stages, type-II superlattice (T2SL) absorber thickness, and doping variations, as well as a noncurrent-matched interband cascade infrared photodetectors (ICIP) structure with equal absorbers. Multistage ICIPs were demonstrated to be capable of operating at high temperatures at zero-bias with superior carrier transport over comparable conventional one-stage detectors. Based on the temperature dependence and bias sensitivity of their responsivities with various absorber thicknesses, the diffusion length is estimated to be between 0.6 and 1.0 μm for T2SL materials at high temperatures (>250 K). A comparison of responsivities between current matched ICIPs with varied absorber thicknesses and noncurrent-matched ICIPs with equal absorbers shows that the current-matching among cascade stages is necessary to maximize responsivity. Additionally, electrical gain exceeding unity is demonstrated in these detectors in the reverse-illumination configuration.