Abstract
Experimental results are presented on microwave amplifiers using Molybdenum Thin Film-Field-Emission cathode devices, fabricated at Stanford Research Institute (SRT). A device having 250 tips, operating at 4.8 mA of current with g/sub m/=840 /spl mu/S is inferred to have an intrinsic power gain of 7 dB at 1.1 GHz. Other results are given for frequencies up to 1.7 GHz. For the first time, device and circuit modeling of sufficient accuracy has been performed that it is possible to confidently deduce the intrinsic performance parameters of the FE devices. The importance of integrated matching circuits for optimum power gain performance is exposed and quantified.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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