Abstract
The bipolar resistive switching characteristics of resistive random access memory (ReRAM) based on HfO2 thin films have been demonstrated by using Ag/HfO2/Pt structured ReRAM device. MIcrowave irradiation (MWI) treatment at low temperature was employed in device fabrication with HfO2 thin films as a transition layer. Compared to the as-deposited Ag/HfO2/Pt device, highly improved uniformity characteristics of resistance values and operating voltages were obtained from the MWI treatment Ag/HfO2/Pt ReRAM device. In addition, a stable DC endurance (> 100 cycles) and a high data retention (> 10 4 sec) were achieved.
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Schedule a callMore From: Journal of the Korean Institute of Electrical and Electronic Material Engineers
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