Microwave Frequency Tripler using InGaAs HEMT Transistor

Abstract

In this work, a 3x frequency multiplier in microstrip technology is presented. The frequency multiplier is used to generate 17.4GHz signal by multiplying 5.8GHz input and by using Indium gallium arsenide (InGaAs) High Electron Mobility Transistor (MGF4918D). The input and output reflection coefficients (S11 and S22) are less than -30 dB. The Rollet factor is greater than unity at the fundamental frequency 5.8GHz and in the 3rd harmonic which places at the frequency of 17.4GHz. The maximum conversion of the fundamental signal to the 3rd harmonic is given by an input power of 3.6dBm, gate-source voltage of -0.6V and drain-source voltage of 3V. The dissipated power Pdc is 45 mW and the surface of the chip occupied on a FR- 4 substrate is 7.3 x 3 cm2.