Abstract
To achieve the low noise and wide bandwidth required for millimeter wavelength astronomy applications, superconductor-insulator-superconductor (SIS) mixer based receiver systems have typically been used. This paper investigates the performance of high electron mobility transistor (HEMT) based low noise amplifiers (LNAs) as an alternative approach for systems operating in the 125 — 211 GHz frequency range. A four-stage, common-source, unconditionally stable monolithic microwave integrated circuit (MMIC) design is presented using the state-of-the-art 35 nm indium phosphide HEMT process from Northrop Grumman Corporation. The simulated MMIC achieves noise temperature (Te) lower than 58 K across the operational bandwidth, with average Te of 38.8 K (corresponding to less than 5 times the quantum limit (hf/k) at 170 GHz) and forward transmission of 20.5 ± 0.85 dB. Input and output reflection coefficients are better than -6 and -12 dB, respectively, across the desired bandwidth. To the authors knowledge, no LNA currently operates across the entirety of this frequency range. Successful fabrication and implementation of this LNA would challenge the dominance SIS mixers have on sub-THz receivers.
Highlights
High electron mobility transistors (HEMTs) have been important components in many areas of electronics, replacing gallium arsenide (GaAs) metal-semiconductor field effect transistors in low noise amplifiers (LNAs) [1]
Previous results from this process indicate that the measured performance matches the simulated performance closely [9], demonstrating that the 35 nm indium phosphide (InP) HEMT process is capable of achieving the desired LNA performance
Additional components in the Atacama Large Millimeter/submillimeter Array (ALMA) receiver cartridge such as the feed, orthomode transducer (OMT) and the coupling optics all have a contribution to the total receiver noise, and are included in the ALMA receiver noise budget
Summary
High electron mobility transistors (HEMTs) have been important components in many areas of electronics, replacing gallium arsenide (GaAs) metal-semiconductor field effect transistors in low noise amplifiers (LNAs) [1]. In addition to this, when cryogenically cooled to 15 K, InP based transistors have been shown to exhibit noise performances just 4 — 5 times the quantum limit [8] These advances have prompted the investigation of using LNA’s at higher frequencies, extending into the frequency ranges currently covered by SIS mixers. One such example is the W-band LNA designed for operation across 67 — 116 GHz [9] which achieved noise temperature (Te) of lower than 28 K when cryogenically cooled to 15 K. This process represents the best recorded cryogenic sub-THz noise performance for any currently available transistor technology
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