Abstract
A state-of-the-art InGaAs HEMT (high electron mobility transistor) receive MMIC (microwave monolithic integrated circuit) consisting of a low-noise amplifier and a novel 3-bit phase shifter has been fabricated and evaluated for receive phased-array development at 20 GHz. The low-noise amplifier employs series and shunt feedback to provide high gain and low noise performance while the 3-bit phase shifter utilizes a novel switched-allpass approach to minimize circuit size. The monolithic receive chip has demonstrated noise figures of less than 2.75 dB and gains between 11.8 and 14.1 dB for the 8 phase-shift states across the 20.2-21.2 GHz frequency range. >
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