Abstract
Avalanche diodes are finding an increasing number of applications as sources of microwave power in the frequency rane 1-100 GHz. There are two basic modes of operation; the IMPATT mode in which the diode behaves as a negative conductance in a resonant circuit, and the TRAPATT mode in which the diode acts as a fast switch which periodically discharges the circuit elements. The basic features of the two modes are explained in terms of the physical mechanisms involved, and the performances of practical devices are reviewed. It is seen that both IMPATT and TRAPATT diodes will operate as amplifiers as well as oscillators and the properties of a typical X-band IMPATT amplifier are described. Examples of applications which are suitable for IMPATT and TRAPATT devices are also discussed.
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