Abstract
Silicon on insulator (SOI) structures are formed by implanting a high dose of nitrogen ions in combination with various doses of oxygen ions. A constant nitrogen dose of is implanted into all of the wafers in combination with additional oxygen doses of zero (0), . All implants are done at 160 keV at a wafer temperature of 500°C. The implanted silicon wafers are subsequently annealed at 1200°C. The resulting microstructures are monitored by transmission electron microscopy (TEM), secondary ion mass spectroscopy (SIMS), and by spreading resistance. Both the as‐implanted and annealed microstructures are found to be dependent upon the relative oxygen to nitrogen doses. The spreading resistance of the buried silicon nitride layer increases with increasing oxygen dose up to a dose of .
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