Abstract
The aim of this work is to improve the dielectric properties of giant permittivity La1.5Sr0.5NiO4 ceramics. The microstructure and dielectric properties of Ga‐doped La1.5Sr0.5NiO4 ceramics prepared by a solid state reaction method were investigated. It was found that Ga3+ doping ions have a remarkable influence on the microstructural evolution. La1.5Sr0.5Ni1−xGaxO4 (x=0, 0.1, and 0.3) ceramics exhibited giant dielectric constant with ε′~3.3–4.7×105 at 20°C and 1kHz. Interestingly, ε′ of La1.5Sr0.5Ni1−xGaxO4 ceramics was enhanced by doping with Ga3+; whereas, the loss tangent (tanδ) decreased significantly. Reduction of tanδ is attributed to the increase in the total resistance, which is mainly governed by the sample–electrode contact resistance, and caused by a decrease in dc conductivity.
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