Abstract
Abstract The microstructure of Si1 − xCx buffer layers grown by molecular beam epitaxy on (001)-oriented silicon and the influence on the growth of diamond by microwave-assisted chemical vapour deposition on these layers were investigated for high and low carbon fractions x of 3.5 and 1.4%. For x = 3.5% microtwins were observed by transmission electron microscopy in the buffer layer before and after diamond growth. For x = 1.4% formation of extended defects was absent. During diamond deposition small crystalline β-SiC precipitates were generated that are homogeneously distributed in the buffer layer. Lattice parameter measurements by high-resolution X-ray diffraction indicate a decrease of the substitutional carbon concentration from 1.4 to 0.7% during diamond deposition. Investigations of the structure of the interface between diamond and the buffer layer by high-resolution transmission electron microscopy in 〈110〉-crystal projections show small regions of diamond grains in direct contact with the buffer layers and also regions of contact between diamond and a thin epitaxial oriented β-SiC interlayer. The orientation relationships between the lattices of diamond grains and buffer layers are characterized by small and large tilts of, e.g., 4 and 76°, respectively.
Published Version
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