Abstract
Indium–tin-oxide (ITO) films and Sm- or Yb-doped ITO films were deposited by DC magnetron sputtering using sintered ceramic ITO targets containing 3.0 wt % of Sm or Yb. The depositions of the films were carried out in pure Ar inert gas under a total gas pressure of 0.5 Pa and without substrate heating. The as-deposited films were post annealed at various temperatures, viz., 170 and 250 °C, in an Ar gas atmosphere at 1.0 Pa for 1 h. The effect of the doped Sm- or Yb-impurities on the microstructure and electrical properties of the ITO films was investigated. It was confirmed that the microstructure, electrical properties, and surface morphology of the Sm- or Yb-doped ITO films were strongly dependent on the content of impurity atoms in the films. The crystallization of the films during deposition was interrupted owing to the large radii of the Yb3+ and Sm3+ ions doped into the In2O3 matrix. The surface roughness of the films was improved by the doping of Yb- or Sm-impurities, as compared with that of the undoped ITO film. The resistivity of the films gradually decreased with increasing annealing temperature. The minimum resistivity of the films was obtained at an annealing temperature of 250 °C owing to the increase in carrier concentration and Hall mobility.
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