Abstract
Structure and properties of indium tin oxide (ITO) films deposited by pulsed dc magnetron sputtering with or without inductively coupled rf plasma assist have been investigated for various O2/(Ar+O2) flow ratios. With inductively coupled rf-plasma assisted, (1) crystallinity of ITO films becomes high and (2) resistivity of ITO films decreases, in particular, for rf power of 150 W. Relationship between carrier concentration, n, and hall mobility, μ, is satisfied with the relationship of μ∝n-2/3 for ITO films deposited by pulsed dc sputtering without rf-plasma. Hall mobility of ITO films deposited by rf-plasma-assisted pulsed dc sputtering hardly decrease as carrier concentration increases in comparison with relationship of μ∝n-2/3. Lattice scattering of carrier electron is decreased by high crystallinity of ITO film deposited by pulsed dc sputtering with rf-plasma. In addition, scattering of carrier electron is decreased at grain boundary due to high packed density of ITO films deposited by rf-plasma-assisted pulsed dc sputtering. Increase of carrier density hardly causes the decrease of hall mobility. It is presumed that ITO film with high cystallinity results from the enhancement in the energy transferred to the surface of a growing film due to the increase in ion fraction and ion energy in the combination of pulsed dc and inductively coupled rf discharges.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
