Abstract
We report on the synthesis of boron nitride (BN) films by ion implantation and demonstrate the results of microstructural observation of the films. Boron films were initially prepared on single-crystal Si(100) substrates by rf sputtering. Then, 30 keV N2+ was implanted at doses ranging from 1×1017 ions/cm2 to 6× 1017 ions/cm2 to synthesize BN. No substrate heating was used in the sputtering and implantation processes. Chemical composition analysis of the films was carried out by Auger electron spectroscopy. Transmission electron microscopy was employed for microstructural observation. Mixed-phase BN, including t-BN, c-BN, w-BN and B25N, was identified in the implanted films. The BN formation mechanism was discussed and compared with theoretical models. The results of this work are consistent with the stress-induced BN formation model in several aspects.
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