Abstract
Synthesis of boron nitride (BN) films are attempted by plasma-assisted chemical vapor deposition using BCl 3 and N 2 as source gases. BN films are characterized by X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared absorption (FTIR) measurements. Capacitance–voltage ( C– V) characteristics are measured for Au/BN/p-Si samples. The dielectric constant is estimated from the capacitance in the accumulation region and the film thickness. A dielectric constant as low as 2.2 is achieved for the BN film. It is found that incorporation of carbon atoms into BN films is effective in reducing the dielectric constant.
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