Microstructural evolution during densification process of neodymium-doped indium zinc oxide ceramic targets and application for high mobility films

Abstract

Oxide targets are crucial materials for transparent conducting oxide (TCO) thin films used in optoelectronic devices. In this study, neodymium-doped indium zinc oxide (NdIZO) ceramic targets were prepared using an advanced pressureless oxygen atmosphere sintering process. By optimizing the experimental conditions, the best sintering parameters were obtained, resulting in dense, fine-grained, and uniformly microstructured NdIZO targets. The influence mechanism of different Nd doping concentrations on the phase composition, microstructure evolution, and electrical properties of the targets during the process of oxide composite powder, green body shaping, and sintering densification was analyzed in detail. The results showed that the pretreatment of the composite powder improved its dispersibility, and sintering activity. The NdIZO-2 target with an atomic ratio of Nd:In:Zn = 0.02:1:1, fabricated under optimal conditions, exhibited high density of 99.8 %, low resistivity of 5.2 mΩ cm, and an average grain size of about 3.9 μm, thereby demonstrating the best comprehensive performance. Moreover, the sputtered films prepared using NdIZO-2 targets also showed excellent properties with transmittance (T) of 88.1 %, electron mobility (μe) of 31.5 cm2/Vs, and resistivity (ρ) of 7.5 × 10−3 Ω cm. This work provides theoretical support for the preparation of high-quality indium zinc oxide (IZO) ceramic targets and their application in high-performance optoelectronic thin film devices.