Abstract

Herein, titanium or thin doped indium zinc oxide (IZO) ceramic targets, composed of TiO2/SnO2, In2O3 and ZnO were prepared. The preparation of composite powders, microstructure evolution, densification and photoelectric properties of these ceramic targets were systematically in detail. The results indicated that doping of SnO2 was more conducive to the density of IZO targets than the doping of TiO2, while they all were beneficial for optimizing electrical performance of IZO ceramic targets due to the solid solution of TiO2/SnO2 in phases, thus the doped IZO ceramic targets had lower resistivity than nondoped IZO targets. In addition, 1wt% SnO2 doped in IZO ceramic targets performed the best (relative density > 99%, resistivity < 1.1 mΩ·cm, average grain size < 2 µm).

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