Abstract
Abstract Ta-doped tin oxide, SnO 2 , films have been deposited using metalorganic chemical vapor deposition system on sapphire (0001) substrates in temperature range of 400–600°C. When Ta concentration is varied from 0 to 8.30 at.% in the films, the electrical resistivity is changed by three orders of magnitude where the minimum resistivity was observed at 1.35% of Ta. An increase in the carrier concentration is a dominant factor responsible for such a large decrease in the resistivity while improved crystalinity contributes to the improvement in the mobility among doped samples. Microstructural investigation revealed the Ta-doped film showed a clean epitaxial relationship of SnO 2 (100)//Al 2 O 3 (0001) with SnO 2 [100]//Al 2 O 3 〈1210〉 between the substrate and the film while undoped film had a weak epitaxial correlation with an extra epitaxial relationship of SnO 2 (100)//Al 2 O 3 (0001) with SnO 2 [010]//Al 2 O 3 〈1100〉.
Published Version
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