Abstract
I describe how the application of focused ion beam (FIB) sputtering can substantially enhance the role of transmission electron microscopy (TEM) in microstructural study of optical materials and devices. The primary new capabilities of the FIB-TEM combination are site-specific selection with nanoscale positional accuracy, simultaneous thinning of materials with very different sputtering rates, deconvolution of nanoscale stress fields, and nanoscale dopant mapping in InP-based structures.
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