Abstract
As device dimensions decrease and circuit densities increase, conventional LOCOS (Local-Oxidation of Silicon) isolation presents a limitation due to lateral encroachment of the isolation-oxide. Variations in LOCOS, including poly-buffered LOCOS have been of interest as means to limit lateral encroachment of the field-oxide into the active device-region. Deep-trench isolation provides a means to support device scaling and in this work is integrated with poly-buffered LOCOS to create self-aligned shallow fieldoxide elements with minimal encroachment into active regions. Use of these technologies however requires an understanding of the behavior of the materials and structures being used and their interactions under different processing conditions. The effect of fabrication-related stresses in the structures is of interest because extended-defects, if formed, could electrically degrade devices.
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Schedule a callMore From: Proceedings, annual meeting, Electron Microscopy Society of America
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