Abstract
Micropatterning of two types of siloxane films, HSQ and SOG was studied by 1.0 MeV focused proton beam. FT-IR measurements show the transformation of the Si-O-Si structures in siloxane to networked structures after proton beam writing. Both the HSQ and SOG are negative resist for 1.0 MeV proton beam. Lines with smooth sidewalls were written by proton beam writing for both HSQ and SOG. Vertical sidewall is observed for HSQ, while it is tapered for SOG.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
