Abstract
Three-dimensional (3D) photothermal radiometric microscopic imaging and laser-intensity-modulation frequency scans have been used for the non-contact, non-intrusive measurement of electronic transport properties of integrated circuits in patterned 4″ Si wafers. The experimental data showed that carrier recombination lifetimes along each scribeline remain constant. However, variations in surface recombination velocities and carrier diffusion coefficients were found. It was further found that such variations are related to the presence of highly doped poly-Si structures adjacent to the scribeline. As a result of these measurements, it is concluded that scribeline photothermal radiometric probing can be used effectively for monitoring local values of the carrier recombination lifetime and, through those, wafer contamination and damage during device fabrication processing.
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