Abstract
Laser-induced infrared photo-carrier radiometry (PCR) is an emerging semiconductor diagnostic technique. PCR completely obliterates the thermal infrared emission band (8-12 μm), unlike the known photothermal techniques, which invariably contain combinations of carrier-wave and thermal-wave infrared emissions due to the concurrent lattice absorption of the incident beam and nonradiative heating. The PCR theory is presented as infrared depth integrals of carrier-wave (CW) density profiles. Experimental aspects of this new methodology are given, including the determination of photo-carrier transport parameters (surface recombination velocities, carrier diffusion coefficients, recombination lifetimes and carrier mobilities) through modulation frequency scans. Case studies of CW scanning imaging, ion implantation and space-charge layer charge profiling at SiO 2 - Si interfaces are also discussed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
