Abstract
Abstract In the present work, two different methods of promoting microcrystal formation in the amorphous network of hydrogenated silicon carbide (Sic: H) have been investigated: glow-discharge plasma-enhanced chemical vapour deposition (PECVD) with high hydrogen dilution and high power density, and annealing of device-quality amorphous SiC: H films. The microcrystalline SiC: H films directly produced by PECVD have a high electrical conductivity (10−5ω-1cm−1), a large energy gap (2–2.1eV) and they are hydrogenated. The annealed films have a high electrical conductivity (7× 10−4ω−1cm−1) and a smaller optical bandgap and they do not contain hydrogen.
Published Version
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