Microcrystalline/Amorphous Thin Si Films Deposition by a Newly Developed Dual Injection System Employing Hydrogen Plasma and Silicon Radicals at Low Temperature (300 °C) Chemical Vapor Deposition Process

Abstract

Low temperature (300 °C) deposition of thin microcrystalline/amorphous silicon films by using newly developed single shower, dual injection, microwave excited high density plasma (1011 cm-3) system is described. This is an original setup based on an experimental modification of a dual shower system that was reported by us earlier. For the first time, for this system, experimental results are presented correlating between the deposition and plasma parameters with the resulting Si films atomic structure. The results consistent interdependence enables to pre-determine, in a wide range, by design, the growth of microcrystalline or amorphous thin Si films, by setting the proper deposition conditions for each film type.