Abstract
A description is given of an apparatus for the formation of oxide films of uniform thickness by a low temperature (300 °–500 °C) chemical vapor deposition process. The reaction gases enter at the top of a rotationally symmetric reaction chamber. By means of locating two fritted–glass disks in the path of the gas, good gas mixing and turbulent conditions are maintained inside the chamber. During the process the axis of this chamber is moved along a circle, the center of which coincides with that of a stationary substrate holder of circular form. This relative movement results in an averaging of conditions, giving a uniformity of the dielectric layer deposited. Constructing this apparatus is simple because no rotating joints are necessary for feeding in the gases, nor sliding contacts for the heater supply and temperature measuring equipment.
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