Abstract
Bulk InxGa1-xAs is an excellent lattice-matched substrate material for InGaAs-based laser diodes. However, it is very difficult to grow compositionally homogeneous InxGa1-xAs single crystal. The growth of single crystal with homogeneous composition using the newly developed traveling liquidus zone (TLZ) growth method is expected. In the TLZ method, cylindrically shaped polycrystalline starting material with a graded compositional profile is the basic requirement. This paper presents some results of micro-Raman scattering studies of the compositional fraction in these starting materials. The compositions evaluated by Raman scattering in various InxGa1-xAs wafer-type samples show good agreement with those examined by the standard method of chemical analysis. Compositional profiles obtained from as-ground and polished surfaces have been compared to understand the necessity of surface polishing in our experiments. The results presented here demonstrate that micro-Raman scattering is one of the best non-destructive methods for analyzing the entire compositional range of InGaAs compound materials.
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