Abstract
The influence of convection in a melt on the compositional homogeneity of the TLZ-grown In0.3Ga0.7As crystals has been investigated by growing crystals with various dimensions on the ground. Excellent compositional homogeneity such as 0.3 plus or minus 0.01 in InAs mole fraction for a distance of 25 mm was obtained when the melt diameter was limited to 2 mm and convective flow in the melt was suppressed. On the other hand, when the crystal diameter was increased to 10 mm, both axial and radial compositional homogeneity was deteriorated due to convection in the melt. Comparing with the numerical simulation, convective flow velocity less than 1.4 mm/h may be sufficient for growing homogeneous crystals and it is not so difficult to suppress convective flow velocity below 1.4 mm/h for 10 mm diameter crystals in microgravity. Therefore, larger homogeneous In0.3Ga0.7As crystals are expected to be grown by the TLZ method on board the International Space Station.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
