Abstract
The effects of different Mg doping concentrations in the main p-GaN layer and the p-GaN capping layer on the electroluminescence (EL) properties of three-dimensional semipolar InGaN/GaN light emitting diode structures grown on GaN stripes with triangular cross-section were investigated. Secondary ion mass spectrometry analysis revealed the Mg concentration of the 3D semipolar p-GaN, indicating a higher Mg incorporation efficiency on the facet as compared to the facet. The EL output power is low with a too low Mg concentration of 3 × 1019 cm−3, probably due to the inferior hole injection efficiency and stays almost constant with the Mg concentration ranging from 4 × 1019 cm−3 until 1.3 × 1020 cm−3 for the 3D LEDs with the facet. Heavy Mg doping in the p-GaN capping layer is required to achieve good ohmic contact performance.
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