Abstract
In this study, a simple and low cost, chemically prepared methyl red/lead sulphide/indium tin oxide diode structure is investigated considering the electrical and optoelectronic properties. Due to the appearance of two physical junctions between methyl red/lead sulphide layers and lead sulphide/indium tin oxide layers, the electrical analyses of the diode are carried out adopting the dual back-to-back Schottky barrier diode model. The steady state electrical analyses under 511–553 nm, 590–604 nm and 621–634 nm of continuous illumination have shown a definite development of photocurrent with the increment of exposure wavelength. Additionally, the photocurrent of the device is found to be incremental with the illumination intensity. In the alternating current analyses, it is seen that the device capacitance measured under illumination (400–700 nm) is altered from the dark capacitance. The transient behaviour of the diode is found to be interesting, by showing an explicit frequency selective nature of the structure.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
