Abstract
Theoretical considerations and experimental results of Metal-Insulator-Semiconductor-Switches (MISS) have been reported in the literature[1–5]. A new model has been recently proposed[6] which explains the current-voltage characteristics by the coupled action of two active devices. In this paper experimental studies are reported on MISS devices with (a) semi-insulating tin oxide and (b) polysilicon layers. The tin-oxide layer has favorable optical properties. In polysilicon samples multiple impedance states have been found. Pulse measurements show, there are three phases associated with the turn-on transient behaviour. The device has higher light sensitivity, higher speed and better I.C. compatibility, than the conventional pnpn diode switch.
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