Method to determine intrinsic and extrinsic base-collector capacitance of HBTs directly from bias-dependent S-parameter data

M Hattendorf,D Scott,M Feng,Q Yang

doi:10.1109/55.910613

Method to determine intrinsic and extrinsic base-collector capacitance of HBTs directly from bias-dependent S-parameter data

M Hattendorf, D Scott + Show 2 more

https://doi.org/10.1109/55.910613

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Journal: IEEE Electron Device Letters	Publication Date: Mar 1, 2001
Citations: 20

Affiliation: University of Illinois Urbana-Champaign

#Extrinsic Base-collector Capacitance #S-parameter Data + Show 8 more

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Abstract

This letter presents a novel small-signal model extraction procedure which determines intrinsic and extrinsic base-collector capacitance (C/sub bci/ and C/sub bex/, respectively) directly from S-parameter data. The procedure utilizes physical assumptions shout the bias dependence of small-signal parameters. The model is validated on several InGaP/GaAs HBTs with different layouts, and the extraction results are discussed. The small-signal model is physical, produces excellent S-parameter fits, and may be used to derive a compact large-signal model.

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