A simple method to split base-collector capacitance of bipolar junction transistors

Seonghearn Lee Seonghearn Lee

doi:10.1109/isdrs.2003.1272034

A simple method to split base-collector capacitance of bipolar junction transistors

Seonghearn Lee Seonghearn Lee

https://doi.org/10.1109/isdrs.2003.1272034

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Publication Date: Dec 10, 2003

Affiliation: Hankuk University of Foreign Studies

#Extrinsic Base-collector Capacitance #Base-collector Capacitance + Show 8 more

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Abstract

In this paper, we propose a new simple method ac current crowding to determine C/sub /spl mu// (splitting intrinsic capacitance) and C/sub /spl mu/x/ (extrinsic base-collector capacitance) parameters, S-parameter measurements on standard Si BJTs by extraction methods.

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