Abstract
A new direct parameter-extraction method based on HF measurements to determine the intrinsic and extrinsic base-emitter and base-collector junction capacitances parameters of heterojunction bipolar transistor is presented in this paper. This method differs from previous methods by extracting the intrinsic collector resistance from zero-bias S-parameter measurements analytically. After extracting the intrinsic collector resistance Rci, this method describes how to extract the intrinsic and extrinsic capacitances respectively. From the measuring capacitance voltage behavior, the capacitance specific model parameters (Cj0, Mj, Vj) can be extracted for the intrinsic as well as for extrinsic part. The results can be introduced in several compact bipolar models such as the Hicum or AgilentHBT model.
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