Abstract
Routine growth of semi-insulating (Ti:Zn)InP with resistivity values between 4×104 and 105 ω cm has been achieved using liquid phase epitaxy. A consistent bakeout procedure for In followed by p-doping using p+-InP source material results in p- epitaxial layers with Na - Nd adjustable up to 2.0×1016 cm-3. Addition of Ti and Zn, followed by crystal growth in the absence of O2, gives the desired semi-insulating InP epitaxial layers at a growth temperature of only 635°C. This growth temperature is 220°C less than that required for InP:Fe, making (Ti:Zn)InP a potentially suitable current confining layer for buried heterostructure lasers.
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