Abstract
The paper reports on a method of low-temperature vacuum-thermal cleaning of the surface of Si and GaAs single crystals developed by the authors, which consists in implanting Ba+ ions (or alkaline elements) into Si and GaAs crystals preliminarily cleaned by ultra-high vacuum by ion etching and subsequent annealing in two stage at 800 K - 15 minutes and at 1000 K for 30 minutes. The effect of effective cleaning is achieved due to the fact that the introduced ions of Ba+ and alkaline elements, being active, form compounds with impurity atoms (O, C, S, N, etc.) at the first stage and are removed together with impurities after the second stage of heating.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
