Abstract
A method for additional purification of the surface of single crystals of semiconductors is developed, which consists in the preliminary cleaning of samples by thermal heating in combination or without ion etching in ultrahigh vacuum, followed by implantation with low-energy Ba+ ions (or ions of other alkaline elements) and their successive removal by brief (1 min) high-temperature (T = 1550 K) thermal heating. The effect of additional purification is achieved by the fact that the embedded ions of Ba+ or other alkaline elements, being active, form compounds with impurity atoms (O, C, S, N, etc.) and are removed during hightemperature heating.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
