Abstract
X-ray characterization of lapped surfaces of Si and Ge monochromator crystals was performed at 33.17 keV. From comparison of the integrated intensity and FWHM (full width at half-maximum) of those crystals versus the particle size of lapping abrasives, Si crystal lapped with abrasive of #3000 showed a very high reflectivity of 78% and a reasonably narrow FWHM of 12.4 arcsec. This lapped crystal provides ten times the X-ray integrated intensity of the etched one and retains energy resolution of 33 eV (ΔE/E=9.9×10-4), which meets the requirements for imaging in intravenous coronary angiography utilizing an enlarged monochromatic beam from an asymmetrical cut Si crystal surface.
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