Abstract

The electrical properties of metamorphic In0.53Ga0.47As metal–oxide–semiconductor capacitors with a 100-Å-thick ZrO2 layer as high-k dielectrics were investigated. The In0.53Ga0.47As surface was pretreated by either sulfur passivation or HCl cleaning before the ZrO2 deposition. Owing to the lower interface-state density after sulfidation, the sulfur-passivated capacitor exhibited better accumulation capacitance and strong inversion at capacitance–voltage measurement than the HCl-cleaned capacitor after post deposition annealing at 350 °C. On the basis of material analyses, the capacitors that subjected to underwent sulfur treatment were found to acquire a thin sulfur layer on the interface, which protects their surface from air exposure and prevents performance degradation.

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